 |
The development and research of functional devices with high dielectric constant, low leakage current, and high breakdown voltage are of great significance for electronic device materials such as gate dielectric film materials and high electron transport diodes. At present, most of the gate dielectric film materials are based on conventional silicon-based electronic component materials. However, conventional silicon-based materials often face problems such as high dielectric loss and tunneling effect due to thickness in practical applications. For this reason, the development of a high dielectric constant thin film material is advantageous to increase the thickness of the gate film without generating excessive dielectric loss and tunneling effects. Conventional inorganic oxides such as hafnium oxide (HfO2), zirconium oxide (ZrO2), etc. have been reported as good materials having a high dielectric constant, and these inorganic oxides are often fragile when assembled into devices, and are also related to substrates. The compatibility is weak. It is also common for organic polymers to be deposited on the surface of a solid substrate to solve the problem of substrate compatibility. However, the organic polymer itself has a small dielectric constant and cannot satisfy the requirement of high dielectric constant. The organic-inorganic composite film combines inorganic components and organic components, and has a wide application in the assembly of a gate dielectric material. However, the simple combination of organic components and inorganic components can easily face defects and weaker forces.
State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences Cao Rong Research Team “973†project in the Ministry of Science and Technology, National Natural Science Foundation of China, Strategic Pilot Science and Technology Project of the Chinese Academy of Sciences, and Collaborative Innovation Center for Energy Materials Chemistry of the Ministry of Education (2011•iChEM) With the financial support, special metal-organic framework compounds (MOFs) have been designed and synthesized, and subsequently assembled to form metal-organic frameworks. The research team used a flexible tridentate carboxylic acid ligand to design and synthesize a novel configuration of the interpenetrating MOF, and used an electrochemical growth method to assemble the MOF onto the surface of a conductive substrate. By testing the dielectric constants of powders and thin films, it was found that the dielectric constant of the thin film after assembling the MOF powder was three times that of the powder; the dielectric properties of the classic interpolated and non-interpenetrating MOFs were investigated. After experimental tests and theoretical calculations, it was found that the intercalation structure can increase the dielectric properties of MOF within a certain temperature range. Mechanical performance test and leakage current test show that the prepared MOF film material has good mechanical properties, high insulation and low leakage current, and has potential applications in the field of electronic devices. The relevant research results are published in the “Nat. Communication†(Nat. Commun., 2016, DOI: 10.1038/ncomms11830).
Previously, the research team used in-situ growth methods to construct metal-organic framework films, explored the sensing and transmission properties of thin films (Langmuir, 2013, 29, 8657), and antibacterial properties (Adv. Mater. Interface, 2014, 2, 1400405). The use of electrochemical methods to successfully prepare metal-organic framework films and explore its application in sensing (J. Mater. Chem. A, 2014, 2, 19473); at the same time, using electrochemical assisted microwave synthesis, The electrochemical growth method was optimized, and a lanthanide metal-organic framework film was successfully prepared (Chem. Commun., 2016, 52, 3951). The preparation method of the metal-organic framework film was expanded and the potential of the metal-organic framework film was developed. application.
kaiping aida sanitary ware technology co.,ltd , https://www.kpfaucets.com